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The sounding pulses thus should have an ACF that is a good approximation of a delta function; in other words, a high autocorrelation peak RpTX (0), as well as low ACF sidelobes. The ratio between the height of the autocorrelation peak and the largest sidelobe is called the POP ratio and is an important quantity for characterization of correlative sounding signals. Figure 8.4 shows an example of an ACF, and the delay resolution that can be achieved with such a signal [de Weck 1992].

Figure 19.7 Bit error rate as a function of the signal-to-noise ratio for rate-1/3- and rate-3/4-coded orthogonalfrequency-division-multiplexing system. Channel is either additive white Gaussian noise, or channel model 4 of the IEEE 802.15.3a channels. The OFDM system follows the speci cations of the WiMedia standard.

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The final type of damage that p-MOS transistors suffer is called negative bias temperature instability (NBTI) This damage can be seen on both n-MOS and pMOS devices, but is far more prevalent in p-MOS transistors, and is usually tested only on these devices It has been shown that NBTI does have hot-carrier repercussions Consequently, this damage mechanism is discussed here First we give a brief introduction to NBTI followed by a discussion of the hot-carrier effect on NBTI NBTI is a phenomenon that occurs at high temperatures, usually over 100 C under the influence of high negative gate fields (see Ref 45 and references cited therein) The effect manifests itself in an increase in the n-channel threshold and a decrease in the subthreshold gradient, indicating Nit and hole Not creation.

Many different mechanisms are thought to be responsible, including oxygen vacancy formation, strained bond reaction, hole or electron tunneling in the oxide, and 46 electrochemical reactions Although this is a general reliability concern, the interest here is what occurs when simultaneous high drain and high gate voltage stresses are applied to the transistor This effect is called hot carrier NBTI, or HC-NBTI 45 The effect of applying voltages to the gate and drain is to accelerate the phenomenon by a full order of magnitude This degradation increases with increasing temperature in contrast to the other mechanisms that have been discussed Although this effect is seldom considered because simultaneous high gate and high drain voltages do not occur for very long in a clock cycle, it is important for nitrided gate oxides discussed in Section 67, since these oxides show increased susceptibility to NBTI and HC-NBTI.

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Note that this HC-NBTI effect is not the summation of hot-carrier damage and NBTI damage (as has been suggested 46 ), since the drain voltages can be so low as to not suffer HC damage (at room temperature), and still show HC-NBTI 635 Conclusion.

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Best practice for displaying warnings is to set it to Always. Another best practice is to repair errors as soon as you can. Errors may cause more errors down the line, and they affect performance adversely because SolidWorks keeps trying to resolve the error.

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